Float-zone Growth
Float-Zone Growth is a semiconductor crystal growth technique in which a polycrystalline rod is locally melted and resolidified in a floating molten zone without the use of a crucible, thereby minimizing contamination and enabling high-purity single-crystal production.
89
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3.7K
Citations
303
Authors
109
Institutions
Publications per year
2017–2026
4
Variants
Float-zone MethodFloat-zone Technique
Parents
89
J. D. Verhoeven, J. E. Ostenson, Eli Gibson et al. · Journal of Applied Physics · 1989 · 98 citations
Natural Sciences, Materials Engineering, Materials Science +17
Growth of high purity LaB6 single crystals by multi-float zone passage
Takaho Tanaka, Eisuke Bannai, Shichio Kawai et al. · Journal of Crystal Growth · 1975 · 91 citations
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109

Hokkaido University
Sapporo, Japan
6 h-index
17 publications
476 citations
University of Illinois Urbana-Champaign
Urbana, United States
6 h-index
13 publications
301 citations
Leibniz Institute for Crystal Growth
Berlin, Germany
4 h-index
11 publications
323 citations
National Institute for Materials Science
Tsukuba, Japan
4 h-index
14 publications
417 citations
Marshall Space Flight Center
Redstone Arsenal, United States
3 h-index
4 publications
125 citations
HRL Laboratories (United States)
Malibu, United States
3 h-index
9 publications
361 citations
RIKEN
Wako, Japan
3 h-index
4 publications
102 citations

University of Freiburg
Freiburg im Breisgau, Germany
3 h-index
7 publications
453 citations
1–8 of 109
38 publications · 1.2K citations
21
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10 publications · 334 citations
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5 publications · 186 citations
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3 publications · 58 citations
3
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2 publications · 95 citations
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