Defect State Passivation

Defect State Passivation is a surface passivation strategy that specifically reduces electronic defect states at semiconductor interfaces by chemically or electronically neutralizing dangling bonds and trap sites, thereby improving carrier lifetime and device performance.

219

Publications

10.4K

Citations

1.4K

Authors

347

Institutions

Publications per year

2017–2026

151

Authors

1.4K

  1. JR
    John Robertson

    University of Cambridge, United Kingdom

    5 publications · 261 citations

    5

    h-index

  2. SL
    Shengzhong Liu

    Shaanxi Normal University, China

    5 publications · 391 citations

    5

    h-index

  3. JC
    Jiangzhao Chen

    Chongqing University, China

    5 publications · 502 citations

    5

    h-index

  4. SW
    Su‐Huai Wei

    National Laboratory of the Rockies, United States

    3 publications · 132 citations

    3

    h-index

  5. MA
    Malcolm Abbott

    UNSW Sydney, Australia

    3 publications · 58 citations

    3

    h-index

1–5 of 1.4K

Venues

  1. Chemical Engineering Journal

    24 publications · 1.1K citations

    21

    h-index

  2. Applied Surface Science

    13 publications · 332 citations

    12

    h-index

  3. Journal of Materials Chemistry A

    11 publications · 360 citations

    10

    h-index

  4. Applied Physics Letters

    9 publications · 283 citations

    9

    h-index

  5. Journal of Materials Chemistry C

    8 publications · 152 citations

    8

    h-index

1–5