A. F. Croxall - Concepedia

Author

A. F. Croxall

University of Cambridge

Also Known As

A F Croxall, A. F. Croxall, A.F. Croxall, A. F. Croxall, Croxall, A. F., Croxall, A.F., Croxall, AF

Publications

295

Citations

H-Index

Concepts

All Affiliations

University of Cambridge Indian Institute of Technology Bombay

About

A. F. Croxall is an author at University of Cambridge specializing in applied physics, physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	101
2	Applied Physics	6	6	101
3	Electrical Engineering	4	4	70
4	Natural Sciences	2	2	46
5	Materials Science	1	1	27

A. F. Croxall

Publications

267

Citations

H-Index

Page 1

	Year	Citations
Anomalous Coulomb Drag in Electron-Hole Bilayers A. F. Croxall, K. Das Gupta, C. A. Nicoll, Physical Review Letters	2008	130
Electrical Control of the Zeeman Spin Splitting in Two-Dimensional Hole Systems Elizabeth Marcellina, A. Srinivasan, Dmitry Miserev, Physical Review Letters	2018	36
Experimental Progress towards Probing the Ground State of an Electron-Hole Bilayer by Low-Temperature Transport K. Das Gupta, A. F. Croxall, J. Waldie, Advances in Condensed Matter Physics Categoryquantum ElectronicsCharge ExcitationsEngineeringBismuth-based SuperconductorsStrongly Correlated Electron Systems	2011	27
Possible effect of collective modes in zero magnetic field transport in an electron-hole bilayer A. F. Croxall, K. Das Gupta, C. A. Nicoll, Physical Review B Charge ExcitationsMagnetic Field TransportEngineeringMagnetoresistanceElectron Physic	2009	19
Demonstration and characterization of an ambipolar high mobility transistor in an undoped GaAs/AlGaAs quantum well A. F. Croxall, Bowen Zheng, F. Sfigakis, Applied Physics Letters SemiconductorsQuantum ScienceElectrical EngineeringCategoryquantum ElectronicsEngineering	2013	18
Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device Bowen Zheng, A. F. Croxall, J. Waldie, Apollo (University of Cambridge) Wide-bandgap SemiconductorElectrical EngineeringCoulomb Drag ResistivityAmbipolar Device DesignEngineering	2016	14
Selective breakdown of quantum Hall edge states and non-monotonic Coulomb drag in a GaAs–AlGaAs electron–hole bilayer K. Das Gupta, M. Thangaraj, A. F. Croxall, Physica E Low-dimensional Systems and Nanostructures SemiconductorsQuantum ScienceGaas–algaas Electron–hole BilayerCategoryquantum ElectronicsEngineering	2007	12
N-type ohmic contacts to undoped GaAs/AlGaAs quantum wells using only front-sided processing: application to ambipolar FETs Deepyanti Taneja, F. Sfigakis, A. F. Croxall, Semiconductor Science and Technology Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringUndoped Triangular WellEngineering	2016	11

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