F. Rahmoune

Design and Simulation of InGaN<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="M1"><mml:mrow><mml:mi>p</mml:mi></mml:mrow></mml:math>-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="M2"><mml:mrow><mml:mi>n</mml:mi></mml:mrow></mml:math>Junction Solar Cell

A. Mesrane, F. Rahmoune, Achour Mahrane et al. · International Journal of Photoenergy · 2015 · 56 citations · Full text

Engineering, Energy Conversion, Photovoltaic Devices +18

On the Si–SiO2 interface trap time constant distribution in metal-oxide-semiconductor transistors

Y. Manéglia, F. Rahmoune, D. Bauza · Journal of Applied Physics · 2004 · 24 citations

Device Modeling, Electrical Engineering, Central Region +12

Fully Complex Valued Wavelet Network for Forecasting the Global Solar Irradiation

Lyes Saad Saoud, F. Rahmoune, Victor Tourtchine et al. · Neural Processing Letters · 2016 · 22 citations

Engineering, Solar Power, Global Solar Irradiation +6

Theoretical Study and Simulations of an InGaN Dual-Junction Solar Cell

A. Mesrane, Achour Mahrane, F. Rahmoune et al. · Journal of Electronic Materials · 2016 · 13 citations

Electrical Engineering, Theoretical Study, Engineering +8

Temperature Dependence of InGaN Dual-Junction Solar Cell

A. Mesrane, Achour Mahrane, F. Rahmoune et al. · Journal of Electronic Materials · 2017 · 12 citations

Electrical Engineering, Engineering, Temperature Dependence +4