Tsung-Ling Tsai

Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

Chun-Yang Huang, Chung-Yu Huang, Tsung-Ling Tsai et al. · Applied Physics Letters · 2014 · 139 citations

Materials Science, Spintronics, Electrical Engineering +14

Impacts of Co doping on ZnO transparent switching memory device characteristics

Firman Mangasa Simanjuntak, Om Kumar Prasad, Debashis Panda et al. · Applied Physics Letters · 2016 · 78 citations

Materials Science, Electrical Engineering, Cobalt Dopant +14

Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode

Firman Mangasa Simanjuntak, Debashis Panda, Tsung-Ling Tsai et al. · Journal of Materials Science · 2015 · 66 citations

Materials Science, Electrical Engineering, Engineering +9

A high performance transparent resistive switching memory made from ZrO2/AlON bilayer structure

Tsung-Ling Tsai, Hsiang‐Yu Chang, Jesse Jen-Chung Lou et al. · Applied Physics Letters · 2016 · 63 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Enhanced switching uniformity in AZO/ZnO1−x/ITO transparent resistive memory devices by bipolar double forming

Firman Mangasa Simanjuntak, Debashis Panda, Tsung-Ling Tsai et al. · Applied Physics Letters · 2015 · 57 citations

Materials Science, Electrical Engineering, Engineering +12