P. E. Pak

Room-temperature photoluminescence of erbium-doped hydrogenated amorphous silicon

M. S. Bresler, O. B. Gusev, V. Kh. Kudoyarova et al. · Applied Physics Letters · 1995 · 104 citations

Electronic Devices, Crystalline Silicon A-si, Engineering +12

Excitation cross section of erbium in semiconductor matrices under optical pumping

O. B. Gusev, M. S. Bresler, P. E. Pak et al. · Physical review. B, Condensed matter · 2001 · 52 citations

Optical Materials, Engineering, Semiconductor Matrices +19

Optical orientation of donor-bound excitons in nanosized InP/InGaP islands

R. I. Dzhioev, B. P. Zakharchenya, V. L. Korenev et al. · Physics of the Solid State · 1998 · 41 citations

Efficient Auger-excitation of erbium electroluminescence in reversely-biased silicon structures

M. S. Bresler, O. B. Gusev, P. E. Pak et al. · Applied Physics Letters · 1999 · 13 citations

Semiconductors, Photonics, Electrical Engineering +14

Spectral dependence of the Hanle effect due to diffusion of optically oriented electrons in p-type semiconductors

R. I. Dzhioev, B. P. Zakharchenya, R. R. Ichkitidze et al. · Physics of the Solid State · 1993 · 11 citations

Semiconductors, Optical Materials, Engineering +10