Ted Schuler‐Sandy

InAs/GaAs <i>p</i>-type quantum dot infrared photodetector with higher efficiency

Yan-Feng Lao, Seyoum Wolde, A. G. U. Perera et al. · Applied Physics Letters · 2013 · 46 citations

Wide-bandgap Semiconductor, Categoryquantum Electronics, Engineering +22

Carrier lifetime studies in midwave infrared type-II InAs/GaSb strained layer superlattice

Brianna Klein, Nutan Gautam, E. Plis et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2014 · 45 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +20

Band engineered HOT midwave infrared detectors based on type-II InAs/GaSb strained layer superlattices

Nutan Gautam, Stephen Myers, Ajit V. Barve et al. · Infrared Physics & Technology · 2012 · 27 citations

Ii-vi Semiconductor, Engineering, Physics +8

Noise, gain, and capture probability of p-type InAs-GaAs quantum-dot and quantum dot-in-well infrared photodetectors

Seyoum Wolde, Yan-Feng Lao, A. G. U. Perera et al. · Journal of Applied Physics · 2017 · 27 citations

Categoryquantum Electronics, Engineering, Optoelectronic Devices +22

InAs/GaAs quantum dot and dots-in-well infrared photodetectors based on p -type valence-band intersublevel transitions

A. G. U. Perera, Yan-Feng Lao, Seyoum Wolde et al. · Infrared Physics & Technology · 2014 · 17 citations

Photonics, Electrical Engineering, Engineering +9