A. V. Lyutetskiy

Saturation of light – current characteristics of high-power lasers (λ = 1.0 – 1.1 mm) in pulsed regime

D.A. Veselov, V. A. Kapitonov, N. A. Pikhtin et al. · Quantum Electronics · 2014 · 35 citations

Engineering, Laser Science, Laser Physics +17

Semiconductor AlGaInAs/InP lasers with ultra-narrow waveguides

Yu. L. Ryaboshtan, P V Gorlachuk, S. O. Slipchenko et al. · Quantum Electronics · 2017 · 23 citations

Optical Materials, Engineering, Laser Science +17

Effect of laser cavity parameters on saturation of light – current characteristics of high-power pulsed lasers

D. A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy et al. · Quantum Electronics · 2015 · 20 citations

Engineering, Laser Science, Current Density +19

A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD

D. A. Vinokurov, V P Konyaev, A. V. Lyutetskiy et al. · Semiconductors · 2010 · 19 citations

Study of the absorption coefficient in layers of a semiconductor laser heterostructure

D.A. Veselov, N. A. Pikhtin, A. V. Lyutetskiy et al. · Quantum Electronics · 2015 · 14 citations

Optical Pumping, Heterostructure Layers, Engineering +10