Y.B. Losovyj - Concepedia

Author

Y.B. Losovyj

University of Nebraska–Lincoln

Also Known As

Losovyj, Y., Y B Losovyj, Y. B. Losovyj, Y. Losovyj, Y.B. Losovyj

Publications

316

Citations

H-Index

Concepts

All Affiliations

University of Nebraska–Lincoln Louisiana State University U.S. Air Force Institute of Technology Indiana University Bloomington Wright-Patterson Air Force Base

About

Y.B. Losovyj is an author at University of Nebraska–Lincoln specializing in engineering, chemistry, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	295
2	Chemistry	6	6	250
3	Applied Physics	5	5	139
4	Chemical Engineering	2	2	154
5	Natural Sciences	1	1	33

Y.B. Losovyj

Publications

295

Citations

H-Index

Page 1

	Year	Citations
Design of ruthenium/iron oxide nanoparticle mixtures for hydrogenation of nitrobenzene Rosemary Easterday, Olivia R. Sanchez-Felix, Y.B. Losovyj, Catalysis Science & Technology Materials ScienceChemical EngineeringMagnetic PropertiesOxide NanoparticlesEngineering	2015	106
On the relation between chemical composition and optical properties of detonation nanodiamonds Ahmad R. Kirmani, Wei Peng, Rémi Mahfouz, Carbon Detonation NanodiamondsDiamond-like CarbonChemical EngineeringOptical MaterialsEngineering	2015	48
Surface photovoltage effects on the isomeric semiconductors of boron-carbide Anthony N. Caruso, Snjezana Balaz, Bo Xu, Applied Physics Letters SemiconductorsBoron NitrideSurface Photovoltage EffectsEngineeringPhysics	2004	33
The electronic structure of oriented poly[2-methoxy-5-(2’-ethyl-hexyloxy)- 1,4-phenylene-vinylene] David Keith Chambers, Sreepadaraj Karanam, Difei Qi, Applied Physics A Materials ScienceEngineeringElectronic MaterialsPolymer ScienceConjugated Polymer	2004	27
Rare earth 4f hybridization with the GaN valence band Lu Wang, Wai‐Ning Mei, Stephen R. McHale, Semiconductor Science and Technology SemiconductorsPhotoemission ResonancesElectrical EngineeringSemiconductor TechnologyEngineering	2012	24
Doping of boron carbides with cobalt, using cobaltocene Lee Carlson, D. LaGraffe, Snjezana Balaz, Applied Physics A Materials ScienceBoron NitrideEngineeringNanoelectronicsBoron Carbides	2007	23
The n-type Gd-doped HfO2 to silicon heterojunction diode Ihor Ketsman, Y.B. Losovyj, Andrei Sokolov, Applied Physics A Electrical EngineeringEngineeringN-type Gd-doped Hfo2Applied PhysicsSemiconductor Device	2007	21
Identification of the possible defect states in poly(3‐hexylthiophene) thin films Deqiang Feng, Anthony N. Caruso, Y.B. Losovyj, Polymer Engineering and Science EngineeringResponsive PolymersPlastics EngineersLow DensityThin Film Process Technology	2007	13

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