Kwang-Hee Lee - Concepedia

Author

Kwang-Hee Lee

Samsung (South Korea)

Also Known As

Kwang-Hee Lee

Publications

603

Citations

H-Index

Concepts

All Affiliations

Samsung (South Korea)Inha University Dankook University

About

Kwang-Hee Lee is an author at Samsung (South Korea) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	582
2	Applied Physics	6	6	582
3	Electrical Engineering	6	6	582
4	Materials Science	2	2	62
5	Physics	1	1	60

Kwang-Hee Lee

Publications

599

Citations

H-Index

Page 1

	Year	Citations
The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors Kwang-Hee Lee, Ji Sim Jung, Kyoung Seok Son, Applied Physics Letters Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringNegative Displacement	2009	308
The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor Jang‐Yeon Kwon, Ji Sim Jung, Kyoung Seok Son, Applied Physics Letters Semiconductor TechnologyElectrical EngineeringElectronic DevicesEngineeringStress-induced Leakage Current	2010	109
The Impact of Device Configuration on the Photon-Enhanced Negative Bias Thermal Instability of GaInZnO Thin Film Transistors Jang‐Yeon Kwon, Kyoung Seok Son, Ji Sim Jung, Electrochemical and Solid-State Letters SemiconductorsPhotonicsElectrical EngineeringElectronic DevicesDevice Configuration	2010	60
The impact of SiNx gate insulators on amorphous indium-gallium-zinc oxide thin film transistors under bias-temperature-illumination stress Ji Sim Jung, Kyoung Seok Son, Kwang-Hee Lee, Applied Physics Letters SemiconductorsSinx Gate InsulatorsElectrical EngineeringSemiconductor DeviceEngineering	2010	43
The influence of sputtering power and O2/Ar flow ratio on the performance and stability of Hf–In–Zn–O thin film transistors under illumination Hyun‐Suk Kim, Kyung‐Bae Park, Kyoung Seok Son, Applied Physics Letters Materials ScienceSemiconductor TechnologyElectrical EngineeringVisible LightEngineering	2010	33
Ti/Cu bilayer electrodes for SiNx-passivated Hf–In–Zn–O thin film transistors: Device performance and contact resistance Joon Seok Park, Tae Sang Kim, Kyoung Seok Son, Applied Physics Letters EngineeringThin Film Process TechnologyTi/cu Bilayer ElectrodesContact ResistanceSemiconductor Device	2010	29
Highly Enhanced Memory Window of 17.8V in Ferroelectric FET with IGZO Channel via Introduction of Intermediate Oxygen-Deficient Channel and Gate Interlayer Sijung Yoo, Donghoon Kim, Duk‐Hyun Choe,	2024	17

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