H.X. Xu

Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high-k HfO2 gate dielectric by using La2O3 interlayer sputtered with/without N2 ambient

H.X. Xu, J.P. Xu, C. X. Li et al. · Applied Physics Letters · 2010 · 28 citations

Natural Sciences, Materials Engineering, Materials Science +17

Electrical properties of Ge metal-oxide-semiconductor capacitors with La2O3 gate dielectric annealed in different ambient

H.X. Xu, J.P. Xu, C.X. Li et al. · Thin Solid Films · 2010 · 22 citations

Engineering, Materials Engineering, Materials Science +17

Impacts of Ti on electrical properties of Ge metal–oxide–semiconductor capacitors with ultrathin high-k LaTiON gate dielectric

H.X. Xu, J.P. Xu, C. X. Li et al. · Applied Physics A · 2010 · 19 citations · Full text

Engineering, Electrical Engineering, Materials Science +17