M. H. Lo

Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions

Chun‐Hung Chiu, Shiou-Yi Kuo, M. H. Lo et al. · Journal of Applied Physics · 2009 · 50 citations

Wide-bandgap Semiconductor, Photonics, Optical Materials +15

High efficiency light emitting diode with anisotropically etched GaN-sapphire interface

M. H. Lo, P. M. Tu, C. H. Wang et al. · Applied Physics Letters · 2009 · 33 citations

Pyramid Structures, Engineering, Nanoelectronics +16

Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes

M. H. Lo, P. M. Tu, C. H. Wang et al. · Applied Physics Letters · 2009 · 32 citations

Wide-bandgap Semiconductor, Electrical Engineering, Defect Selective Passivation +11

Concentration dependence of carrier localization in InN epilayers

G. W. Shu, Pae Wu, M. H. Lo et al. · Applied Physics Letters · 2006 · 29 citations

Photonics, Photoluminescence, Engineering +11

Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition

Tsung‐Shine Ko, Tien‐Chang Lu, T. C. Wang et al. · Journal of Applied Physics · 2008 · 23 citations

Wide-bandgap Semiconductor, Photonics, Different Widths +14