V. F. Stelmakh

Processes of Radiation Defect Interaction and Amorphisation of Silicon at Large Implantation Doses

Paweł Żukowski, S. B. Kantorow, D. Mączka et al. · physica status solidi (a) · 1989 · 38 citations

Engineering, Materials Engineering, Materials Science +17

Screening of electrostatic fields in crystalline semiconductors by electrons hopping over defects

N. A. Poklonski, V. F. Stelmakh · physica status solidi (b) · 1983 · 38 citations

Natural Sciences, Materials Science, Physics +17

Peculiarities of damage in diamond irradiated by high energy ions

D.P. Erchak, V.G. Efimov, A.M. Zaitsev et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1992 · 27 citations

Engineering, Materials Science, Physics +11

Ionoluminescence of porous silicon

J. Żuk, R. Kuduk, M. Kulik et al. · Journal of Luminescence · 1993 · 23 citations

Natural Sciences, Materials Engineering, Materials Science +8

Depth distribution of defects and impurities in diamond and cubic boron nitride after high-energy ion implantation

A. F. Burenkov, V. S. Varychenko, A.M. Zaitsev et al. · physica status solidi (a) · 1989 · 22 citations

Engineering, Materials Engineering, Materials Science +17