Guenther Traenkle

InP DHBT Process in Transferred-Substrate Technology With $f_{t}$ and $f_{\max}$ Over 400 GHz

T. Kraemer, Matthias Rudolph, Franz Josef Schmueckle et al. · IEEE Transactions on Electron Devices · 2009 · 29 citations

Engineering, Electrical Engineering, Materials Science +17

InP-DHBT-on-BiCMOS Technology With $f_{T}/f_{\max}$ of 400/350 GHz for Heterogeneous Integrated Millimeter-Wave Sources

T. Kraemer, Ina Ostermay, Thomas Jensen et al. · IEEE Transactions on Electron Devices · 2013 · 26 citations

Engineering, Electrical Engineering, Microelectronics +16

Low-loss smile-insensitive external frequency-stabilization of high power diode lasers enabled by vertical designs with extremely low divergence angle and high efficiency

P. Crump, Steffen Knigge, A. Maaßdorf et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2013 · 20 citations · Full text

Engineering, Electrical Engineering, Optical Materials +15

3-W high-brightness tapered diode lasers at 735 nm based on tensile-strained GaAsP QWs

Goetz Erbert, J. Fricke, Ralf Huelsewede et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2003 · 17 citations

Engineering, Electrical Engineering, Materials Science +17

Optimization of GaAsP-QWs for high-power diode lasers at 800 nm

H. Wenzel, Goetz Erbert, F. Bugge et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2000 · 16 citations

Engineering, Materials Engineering, Materials Science +17