With the excellent material properties of Carbon Nano-tubes (CNTs) developed in this work (Coefficient of Thermal Expansion ~-2 x 10 ^-6 K ^-1 , Resistivity~10 ^-6 Ω-m, Young's modulus~1000 GPa, and thermal conductivity ~800 Wm ^-1 K ^-1 ), the real 3D integrated circuits (ICs) system with CNTs as the high aspect ratio (>25)/small diameters (<; 5 μm) Through Silicon Vias (TSVs) is demonstrated. The device temperature can be reduced ~15 °C and the keep-out zone region can be reduced ~80%. On the other hand, the CNTs 3DICs system also shows that the better system-level electrical performance from the latency, bandwidth density, power density, and reliability (~10X) points of view. The developed technologies including (1) High quality CNTs growing at the low temperature (550 °C) using a novel gas Fe(C ₅ H ₅ ) ₂ reactant, (2) Optimized wafer bonding process, (3) Non-mask laser engrave patterning, and (4) wafer transfer technology by a thermal release tape/ethylene viny acetate processes provide the useful solution for the applications of CNTs as a vertical connection material in the near coming high-density 3D device.

P.-Y. Lu

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