Daniel S. H. Chan - Concepedia

Concepedia

Author

Daniel S. H. Chan

National University of Singapore

Also Known As

Daniel Chan, Daniel S. H. Chan, Daniel S.H. Chan, Daniel Siu-Hung Chan

23

Publications

1.6K

Citations

13

H-Index

44

Concepts

All Affiliations

National University of Singapore National Taiwan University of Science and Technology Korea Advanced Institute of Science and Technology Institute of Microelectronics Samsung (South Korea)

DS

About

Daniel S. H. Chan is an author at National University of Singapore specializing in engineering, materials science, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	1.5K
2	Applied Physics	8	8	1.2K
3	Chemistry	3	3	156
4	Chemical Engineering	2	2	85
5	Computer Engineering	1	1	20

Daniel S. H. Chan

×

13

Publications

1.6K

Citations

12

H-Index

	Year	Citations
Polymer electronic memories: Materials, devices and mechanisms Qidan Ling, Der‐Jang Liaw, Chunxiang Zhu, Progress in Polymer Science Materials ScienceEngineeringElectronic MaterialsSemiconducting PolymerElectronic Memory	2008	974
Polymer memories: Bistable electrical switching and device performance Qidan Ling, Der‐Jang Liaw, Eric Yeow‐Hwee Teo, Polymer EngineeringOrganic ElectronicsResponsive PolymersPolymer NanocompositesPhase Change Memory	2007	222
Volatile electrical switching in a functional polyimide containing electron-donor and -acceptor moieties Yiliang Liu, Qidan Ling, E. T. Kang, Journal of Applied Physics EngineeringOrganic ElectronicsResponsive PolymersChemistryVolatile Electrical Switching	2009	71
Bistable Electrical Switching and Memory Effects in a Thin Film of Copolymer Containing Electron Donor−Acceptor Moieties and Europium Complexes Qidan Ling, Wen Wang, Yan Song, The Journal of Physical Chemistry B Materials ScienceConducting PolymerChemical EngineeringBistable Electrical SwitchingEngineering	2006	65
Self-assembly of Al2O3 nanodots on SiO2 using two-step controlled annealing technique for long retention nonvolatile memories Jing Hao Chen, Won Jong Yoo, Daniel S. H. Chan, Applied Physics Letters EngineeringLong RetentionAl2o3 Continuous FilmsPhase Change MemoryAl2o3 Nds	2005	38
Performance Improvement in Charge-Trap Flash Memory Using Lanthanum-Based High- $\kappa$ Blocking Oxide Wei He, Jing Pu, Daniel S. H. Chan, IEEE Transactions on Electron Devices Materials ScienceMaterials EngineeringElectrical EngineeringElectronic DevicesEngineering	2009	35
Process and Material Properties of HfLaO[sub x] Prepared by Atomic Layer Deposition Wei He, Daniel S. H. Chan, Sun-Jung Kim, Journal of The Electrochemical Society	2008	34
Wavelength Effects in the Laser Cleaning Process Yongfeng Lu, Wen‐Dong Song, Chong-Kiat Tee, Japanese Journal of Applied Physics Materials ScienceLaser OpticsWavelength EffectsEngineeringOptical Properties	1998	28
Characteristics of Self-Aligned Gate-First Ge p- and n-Channel MOSFETs Using CVD $\hbox{HfO}_{2}$ Gate Dielectric and Si Surface Passivation Nan Wu, Qingchun Zhang, N. Balasubramanian, IEEE Transactions on Electron Devices Materials ScienceSemiconductor TechnologyElectrical EngineeringEngineeringGe N-channel Mosfet	2007	27
Origin of Different Dependences of Open-Circuit Voltage on the Electrodes in Layered and Bulk Heterojunction Organic Photovoltaic Cells Chunfu Zhang, Shiwun Tong, Changyun Jiang, IEEE Transactions on Electron Devices EngineeringOrganic ElectronicsOrganic Solar CellPhoto-electrochemical CellPhotovoltaic Devices	2010	20

Page 1