A.M. Mancini - Concepedia

Author

A.M. Mancini

Istituto Nazionale di Fisica Nucleare, Sezione di Lecce

Also Known As

A M Mancini, A. M Mancini, A. M. MANCINI, A. M. Mancini, A. Mancini, A. Maria Mancini, A.M Mancini, A.M. Mancini, AM Mancini, Antonella Mancini

105

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

Istituto Nazionale di Fisica Nucleare, Sezione di Lecce Istituto Nazionale per la Fisica della Materia University of Bari Aldo Moro Institute of Nanostructured Materials Istituto Nazionale di Fisica Nucleare, Sezione di Bari

About

A.M. Mancini is an author at Istituto Nazionale di Fisica Nucleare, Sezione di Lecce specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	34	783
2	Applied Physics	16	28	649
3	Chemistry	11	12	271
4	Chemical Engineering	4	4	48
5	Natural Sciences	3	3	82

A.M. Mancini

Publications

904

Citations

H-Index

Page 1

	Year	Citations
Size and shape control of GaAs nanowires grown by metalorganic vapor phase epitaxy using tertiarybutylarsine P. Paiano, P. Prete, N. Lovergine, Journal of Applied Physics EngineeringB GaasSemiconductor NanostructuresSemiconductorsNanostructure Synthesis	2006	75
Melt growth of single crystal ingots of GaSe by Bridgman-Stockbarger's method V.L. Cardetta, A.M. Mancini, Aurora Rizzo Journal of Crystal Growth Materials ScienceEngineeringCrystal Growth TechnologyMelt GrowthThermodynamics	1972	60
Study on Instability Phenomena in CdTe Diode-Like Detectors I. Farella, G. Montagna, A.M. Mancini, IEEE Transactions on Nuclear Science	2009	58
Electric Field Properties of CdTe Nuclear Detectors A. Cola, I. Farella, A.M. Mancini, IEEE Transactions on Nuclear Science Ii-vi SemiconductorElectrical EngineeringEngineeringRadiation DetectionPhysics	2007	48
Optical properties of MOVPE-grown ZnS epilayers on (100) GaAs M. Fernández, P. Prete, N. Lovergine, Physical review. B, Condensed matter Materials ScienceIi-vi SemiconductorOptical MaterialsEngineeringPhotoluminescence	1997	43
Growth and habit of GaSe crystals obtained from vapour by various methods V.L. Cardetta, A.M. Mancini, C. Manfredotti, Journal of Crystal Growth Materials ScienceEngineeringCrystal MaterialCrystal Growth TechnologyGase Crystals	1972	38
On hydrogen transport VPE-grown CdTe epilayers for fabrication of 1–100 keV X-ray detectors N. Lovergine, A. Cola, P. Prete, Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment	2001	34
New materials for optoelectronic devices: Growth and characterization of indium and gallium chalcogenide layer compounds A.M. Mancini, G. Micocci, Aurora Rizzo Materials Chemistry and Physics Materials ScienceMaterials EngineeringOptical MaterialsElectronic DevicesElectronic Materials	1983	32
Growth of ZnTe by metalorganic vapor phase epitaxy: Surface adsorption reactions, precursor stoichiometry effects, and optical studies N. Lovergine, Massimo Longo, P. Prete, Journal of Applied Physics EngineeringCrystal Growth TechnologyPrecursor Stoichiometry EffectsChemistryGrowth Rate Dependence	1997	31
GaAs nanowires grown by Au-catalyst-assisted MOVPE using tertiarybutylarsine as group-V precursor P. Paiano, P. Prete, E. Speiser, Journal of Crystal Growth SemiconductorsMaterials ScienceIi-vi SemiconductorEngineeringNanotechnology	2006	31

Page 1