Self-Cleaning Particle Coating with Antireflection Properties

Xintong Zhang, Osamu Sato, M. Taguchi, +3

Chemistry of Materials

Materials ScienceSelf-cleaning SurfaceChemical EngineeringEngineeringWater Contact Angle +13

Non-volatile resistive switching for advanced memory applications

An Chen, S. Haddad, Yi-Ching Wu, +11

Non-volatile MemoryEngineeringEmerging Memory TechnologyNon-volatile Resistive SwitchingComputer Architecture +14

Growth Mechanism and Surface Chemical Characteristics of Dicarboxylic Acid-Modified CeO₂ Nanocrystals Produced in Supercritical Water: Tailor-Made Water-Soluble CeO₂ Nanocrystals

M. Taguchi, Seiichi Takami, Takashi Naka, +1

Crystal Growth & Design

EngineeringColloidal NanocrystalsNanoheterogeneous CatalysisChemistryMetal Oxide Nanocrystals +15

Reversible Photo‐Switching of the Magnetization of Iron Oxide Nanoparticles at Room Temperature

Rie Mikami, M. Taguchi, Koji Yamada, +3

Angewandte Chemie International Edition

NanoparticlesMagnetic PropertiesEngineeringIron Oxide NanoparticlesReversible Photo‐switching +17

Supercritical hydrothermal synthesis of hydrophilic polymer-modified water-dispersible CeO₂nanoparticles

M. Taguchi, Seiichi Takami, Tadafumi Adschiri, +3

CrystEngComm

Paa-modified Ceo2 NanoparticlesEngineeringPolymer NanotechnologyNanostructured PolymerPolymer Nanocomposites +15

Photoswitchable Magnetic Nanoparticles of Prussian Blue with Amphiphilic Azobenzene

M. Taguchi, Koji Yamada, Koji Suzuki, +2

Chemistry of Materials

NanoparticlesEngineeringPolymer-based MagnetMagnetic ResonanceChemistry +15

A 256-Mb SDRAM using a register-controlled digital DLL

A. Hatakeyama, H. Mochizuki, T. Aikawa, +16

IEEE Journal of Solid-State Circuits

Hardware SecurityClock Access TimeElectrical Engineering256-Mb SdramVlsi Design +10

One-pot synthesis of monoclinic ZrO2 nanocrystals under subcritical hydrothermal conditions

M. Taguchi, T. Nakane, Akiyuki Matsushita, +4

The Journal of Supercritical Fluids

Materials ScienceEngineeringNanomaterialsCeramic SynthesisChemistry +4

Fast cycle RAM (FCRAM); a 20-ns random row access, pipe-lined operating DRAM

Yoshihiro Sato, Toshisada Suzuki, T. Aikawa, +10

Hardware SecurityDram CoreMemory ArchitectureNon-volatile MemoryEngineering +8

Reaction temperature variations on the crystallographic state of spinel cobalt aluminate

M. Taguchi, T. Nakane, Kenjiro Hashi, +7

Dalton Transactions

Magnetic PropertiesEngineeringSolid-state ChemistryChemistryHydroxide Precursor +14