N. Biswas

HfO 2 gate dielectric with 0.5 nm equivalent oxide thickness

H. R. Harris, Kang-Il Choi, Narendra Mehta et al. · Applied Physics Letters · 2002 · 84 citations · Full text

Engineering, Silicon On Insulator, Hafnium Dioxide Films +17

Permittivity enhancement of aluminum oxide thin films with the addition of silver nanoparticles

R. Ravindran, Keshab Gangopadhyay, S. Gangopadhyay et al. · Applied Physics Letters · 2006 · 53 citations

Materials Science, Electrical Engineering, Engineering +15

Plasma enhanced metalorganic chemical vapor deposition of amorphous aluminum nitride

H. R. Harris, N. Biswas, H. Temkin et al. · Journal of Applied Physics · 2001 · 35 citations · Full text

Materials Science, Aluminium Nitride, Electrical Engineering +15

Investigation on hexamethyldisilazane vapor treatment of plasma-damaged nanoporous organosilicate films

Bashar Lahlouh, Jorge Lubguban, N. Biswas et al. · Applied Surface Science · 2005 · 29 citations

Materials Science, Chemical Engineering, Engineering +8

Supercritical carbon dioxide extraction of porogens for the preparation of ultralow-dielectric-constant films

Bashar Lahlouh, Jorge Lubguban, N. Biswas et al. · Applied Physics Letters · 2003 · 27 citations

Engineering, Nanoporous Material, Supercritical Fluid Chromatography +19