W-P. Hong

In0.53Ga0.47As metal-semiconductor-metal photodetector using proton bombarded <i>p</i>-type material

Mulpuri V. Rao, W-P. Hong, C. Caneau et al. · Journal of Applied Physics · 1991 · 30 citations

Electrical Engineering, Msm Detector, Radiation Detection +8

Transport properties of two-dimensional electron gas systems in delta-doped Si:In0.53Ga0.47As grown by organometallic chemical vapor deposition

W-P. Hong, F. DeRosa, R. Bhat et al. · Applied Physics Letters · 1989 · 17 citations

Semiconductors, Hall Mobilities, Engineering +11

Pseudomorphic InGaAs base ballistic hot-electron device

K. Seo, M. Heiblum, C. M. Knoedler et al. · Applied Physics Letters · 1988 · 15 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +10

Co, Fe, and Ti Implants in InGaAs and Co Implants in InP at 200° C

Mulpuri V. Rao, Sadanand M. Gulwadi, Savitri Mulpuri et al. · Journal of Electronic Materials · 1992 · 11 citations

Materials Engineering, Materials Science, Electrical Engineering +5