T. M. Buehler - Concepedia

Author

T. M. Buehler

UNSW Sydney

Also Known As

Buehler, T. M., T M Buehler, T. M. Buehler, T.M. Buehler, Tilo M Buehler, Tilo M. Buehler

Publications

328

Citations

H-Index

Concepts

All Affiliations

UNSW Sydney Centre for Quantum Computation and Communication Technology The University of Melbourne

About

T. M. Buehler is an author at UNSW Sydney specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	5	5	175
2	Applied Physics	5	5	175
3	Electrical Engineering	4	4	165
4	Education	1	1	35
5	Natural Sciences	1	1	66

T. M. Buehler

Publications

284

Citations

H-Index

Page 1

	Year	Citations
Progress in silicon-based quantum computing Robert G. Clark, R. Brenner, T. M. Buehler, Philosophical Transactions of the Royal Society A Mathematical Physical and Engineering Sciences Quantum ScienceElectrical EngineeringEngineeringQuantum ComputingPhysics	2003	66
Charge sensing in carbon-nanotube quantum dots on microsecond timescales Michael J. Biercuk, D. J. Reilly, T. M. Buehler, Physical Review B Electrical EngineeringCoulomb DiamondsEngineeringCarbon-based MaterialNanomaterials	2006	45
Correlated charge detection for readout of a solid-state quantum computer T. M. Buehler, D. J. Reilly, R. Brenner, Applied Physics Letters	2003	41
Single-shot readout with the radio-frequency single-electron transistor in the presence of charge noise T. M. Buehler, D. J. Reilly, R.P. Starrett, Applied Physics Letters EngineeringHigh Readout FidelityQuantum MeasurementSingle-shot Readout DeviceEducation	2005	35
Controlled single electron transfer between Si:P dots T. M. Buehler, V. Chan, A. J. Ferguson, Applied Physics Letters	2006	25
Observing sub-microsecond telegraph noise with the radio frequency single electron transistor T. M. Buehler, D. J. Reilly, R.P. Starrett, Journal of Applied Physics	2004	23
Development and operation of the twin radio frequency single electron transistor for cross-correlated charge detection T. M. Buehler, D. J. Reilly, R.P. Starrett, Journal of Applied Physics	2004	20
Ion implanted Si:P double dot with gate tunable interdot coupling Victor Chan, T. M. Buehler, A. J. Ferguson, Journal of Applied Physics Phosphorus Ion ImplantationElectrical EngineeringEngineeringPhysicsNanoelectronics	2006	19
Single atom Si nanoelectronics using controlled single-ion implantation M. Mitić, S. E. Andresen, Chih Hwan Yang, Microelectronic Engineering Ion ImplantationEngineeringNanotechnologyNanoelectronicsApplied Physics	2005	10

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