Roman Drachev - Concepedia

Author

Roman Drachev

Also Known As

R. Drachev, R. V. Drachev, R.V Drachev, R.V. Drachev, Roman V. Drachev, Roman Drachev, Roman V. Drachev, Roman Victorovich Drachev

Publications

316

Citations

H-Index

Concepts

All Affiliations

Corning (United States)Stony Brook University Dow Chemical (Japan)University of South Carolina

About

Roman Drachev is an author at Corning (United States) specializing in engineering, applied physics, and microstructure.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	276
2	Applied Physics	10	10	237
3	Materials Science	9	9	210
4	Materials Engineering	6	6	126
5	Electrical Engineering	1	1	39

Roman Drachev

Publications

276

Citations

H-Index

Page 1

	Year	Citations
Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H–SiC Michael Dudley, Fangzhen Wu, H. Wang, Applied Physics Letters EngineeringFault VectorsMechanical EngineeringDefect ToleranceTransport Phenomena	2011	64
Controllable 6H-SiC to 4H-SiC polytype transformation during PVT growth Eugene Y. Tupitsyn, A. Arulchakkaravarthi, Roman Drachev, Journal of Crystal Growth Materials EngineeringElectrical EngineeringEngineeringPower DevicePvt Growth	2007	39
Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC H. Wang, Fangzhen Wu, Shayan Byrappa, Applied Physics Letters Materials ScienceSemiconductor TechnologyTed SegmentsEdge DislocationsEngineering	2012	28
Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a Michael Dudley, Huan Huan Wang, Fangzhen Wu, Materials science forum EngineeringSevere Plastic DeformationMechanical EngineeringNew GenerationDefect Tolerance	2011	27
Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density Michael Dudley, Ning Zhang, Yu Zhang, Materials science forum Materials EngineeringMaterials ScienceBasal Plane DislocationEngineeringDislocation Interaction	2010	21
Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals Michael Dudley, Shayan Byrappa, Huanhuan Wang, MRS Proceedings Materials EngineeringMaterials ScienceEngineeringSevere Plastic DeformationDislocation Interaction	2010	21
Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC Fangzhen Wu, Huan Huan Wang, Sha Yan Byrapa, Materials science forum EngineeringSevere Plastic DeformationMechanical EngineeringPost-growth Mutual InteractionGrowth Dislocations	2012	19
Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC Huan Huan Wang, Sha Yan Byrapa, Fangzhen Wu, Materials science forum Materials ScienceHollow CoresEdge DislocationsEngineeringCrystalline Defects	2012	18
Liquid phase silicon at the front of crystallization during SiC PVT growth Roman Drachev, G.D Straty, D. I. Cherednichenko, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringLiquid Phase SiliconSic Pvt Growth	2001	15
Deflection of Threading Dislocations with Burgers Vector c/c+a Observed in 4H-SiC PVT–Grown Substrates with Associated Stacking Faults Sha Yan Byrapa, Fangzhen Wu, Huan Huan Wang, Materials science forum Materials ScienceEngineeringDislocation InteractionPhysicsCrystalline Defects	2012	13

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