Roman Drachev

Stacking faults created by the combined deflection of threading dislocations of Burgers vector c and c+a during the physical vapor transport growth of 4H–SiC

Michael Dudley, Fangzhen Wu, H. Wang et al. · Applied Physics Letters · 2011 · 64 citations

Engineering, Fault Vectors, Mechanical Engineering +16

Controllable 6H-SiC to 4H-SiC polytype transformation during PVT growth

Eugene Y. Tupitsyn, A. Arulchakkaravarthi, Roman Drachev et al. · Journal of Crystal Growth · 2007 · 39 citations

Materials Engineering, Electrical Engineering, Engineering +4

Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC

H. Wang, Fangzhen Wu, Shayan Byrappa et al. · Applied Physics Letters · 2012 · 28 citations · Full text

Materials Science, Semiconductor Technology, Ted Segments +13

Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a

Michael Dudley, Huan Huan Wang, Fangzhen Wu et al. · Materials science forum · 2011 · 27 citations

Engineering, Severe Plastic Deformation, Mechanical Engineering +17

Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density

Michael Dudley, Ning Zhang, Yu Zhang et al. · Materials science forum · 2010 · 21 citations

Materials Engineering, Materials Science, Basal Plane Dislocation +12