Z-Q. Fang

Deep centers in n-GaN grown by reactive molecular beam epitaxy

Z-Q. Fang, D. C. Look, W. Kim et al. · Applied Physics Letters · 1998 · 143 citations

Semiconductors, Materials Science, Electrical Engineering +14

On the main irradiation-induced defect in GaN

L. Polenta, Z-Q. Fang, D. C. Look · Applied Physics Letters · 2000 · 104 citations

Dlts Spectrum, Wide-bandgap Semiconductor, Semiconductor Technology +10

Dislocation-related electron capture behaviour of traps in n-type GaN

Z-Q. Fang, D. C. Look, L. Polenta · Journal of Physics Condensed Matter · 2002 · 74 citations

Deep level characteristics in n-GaN with inductively coupled plasma damage

H. K. Cho, Farid Khan, I. Adesida et al. · Journal of Physics D Applied Physics · 2008 · 66 citations

Electrical Engineering, Ion Implantation, Point Defects +12

Zn- and O-face polarity effects at ZnO surfaces and metal interfaces

Yufeng Dong, Z-Q. Fang, D. C. Look et al. · Applied Physics Letters · 2008 · 65 citations

Engineering, Vacuum Device, Zno Surfaces +16