A. Żakrzewski - Concepedia

Author

A. Żakrzewski

Also Known As

A J Zakrzewski, A Zakrzewski, A. J. Zakrzewski, A. Zakrzewski, A. Żakrzewski, A.J Zakrzewski, A.J. Zakrzewski, Adam J. Zakrzewski, Adam Zakrzewski

Publications

496

Citations

H-Index

Concepts

All Affiliations

Polish Academy of Sciences Institute of Physics Cardinal Stefan Wyszyński University in Warsaw Centre National de la Recherche Scientifique Leiden University

AŻ

About

A. Żakrzewski is an author at Polish Academy of Sciences specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	17	370
2	Applied Physics	12	17	370
3	Natural Sciences	6	6	151
4	Chemistry	5	5	104
5	Electrical Engineering	4	4	130

A. Żakrzewski

Publications

393

Citations

H-Index

Page 1

	Year	Citations
Structure of the Intrinsic Shallow Electron Center in AgCl Studied by Pulsed Electron Nuclear Double Resonance Spectroscopy at 95 GHz Martijn Bennebroek, Oleg G. Poluektov, A. Żakrzewski, Physical Review Letters Microwave SpectroscopyElectrical EngineeringAgcl StudiedAdjacent Silver IonsEngineering	1995	47
Observation of rapid direct charge transfer between deep defects in silicon A.M. Frens, Martijn Bennebroek, A. Żakrzewski, Physical Review Letters SemiconductorsElectrical EngineeringEngineeringPhysicsNanoelectronics	1994	43
Growth and optical characterization of Cd<sub>1‐<i>x</i></sub>Be<sub><i>x</i></sub>Se and Cd<sub>1‐<i>x</i></sub>Mg<sub><i>x</i></sub>Se crystals F. Firszt, A.A. Wronkowska, A. Wronkowski, Crystal Research and Technology Optical MaterialsEngineeringCrystal Growth TechnologyChemistryCd 1‐	2005	33
Optical properties of manganese doped wide band gap ZnS and ZnO M. Godlewski, A. Wójcik-Głodowska, E. Guziewicz, Optical Materials Materials ScienceIi-vi SemiconductorOptical MaterialsEngineeringOptical Properties	2009	32
Direct evidence of three-center Auger recombination processes in ZnS:Cu,Fe A. Żakrzewski, M. Godlewski Physical review. B, Condensed matter MagnetismSpintronicsEngineeringPhysicsNatural Sciences	1986	29
Hafnium dioxide as a passivating layer and diffusive barrier in ZnO/Ag Schottky junctions obtained by atomic layer deposition T. Krajewski, Sylwia Gierałtowska, A. Żakrzewski, Applied Physics Letters Materials ScienceZno LayerElectrical EngineeringIi-vi SemiconductorEngineering	2011	26
Auger-type excitation and de-excitation processes in rare earth and transition metal doped semiconductors M. Godlewski, A. Żakrzewski, V.Yu. Ivanov Journal of Alloys and Compounds SemiconductorsIi-vi SemiconductorPhotoluminescenceEngineeringPhysics	2000	23
Isolated iron and chromium as recombination centers in ZnS A. Żakrzewski, M. Godlewski Journal of Applied Physics Inorganic ChemistryPhotoluminescenceRecombination CentersCross SectionsPhysics	1990	18
Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance P. Johannesen, A. Żakrzewski, L. S. Vlasenko, Physical Review B Wide-bandgap SemiconductorPhotoluminescenceEngineeringPhysicsOptical Properties	2004	17
Rapid thermal processing of semimagnetic superstructures studied by magnetoreflectivity P. Kossacki, Nguyen The Khoi, J. A. Gaj, Superlattices and Microstructures Materials ScienceMagnetismFerromagnetismEngineeringApplied Physics	1994	17

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