Sheng‐Horng Yen - Concepedia

Author

Sheng‐Horng Yen

National Changhua University of Education

Also Known As

S.N. Yen, Sheng-Horng Yen, Sheng-horng Yen, Sheng‐Horng Yen

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

National Changhua University of Education Epistar (Taiwan)Hsiuping University of Science and Technology National Yang Ming Chiao Tung University

About

Sheng‐Horng Yen is an author at National Changhua University of Education specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	23	1.1K
2	Applied Physics	17	23	1.1K
3	Electrical Engineering	13	17	892
4	Natural Sciences	1	1	92
5	Materials Engineering	1	1	30

Sheng‐Horng Yen

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers Yen‐Kuang Kuo, Jih‐Yuan Chang, Miao‐Chan Tsai, Applied Physics Letters EngineeringIngan/ingan LedBlue Ingan Multiple-quantumIngan BarriersNanoelectronics	2009	233
Effect of P-Type Last Barrier on Efficiency Droop of Blue InGaN Light-Emitting Diodes Yen‐Kuang Kuo, Miao-Chan Tsai, Sheng‐Horng Yen, IEEE Journal of Quantum Electronics P-type Last BarrierP-type DopingEngineeringNanoelectronicsLight-emitting Diodes	2010	105
Vegard's law deviation in lattice constant and band gap bowing parameter of zincblende InxGa1−xN Yen‐Kuang Kuo, Bo-Ting Liou, Sheng‐Horng Yen, Optics Communications Materials ScienceEngineeringPhysicsZincblende Inxga1−xnNatural Sciences	2004	92
Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well Chih‐Teng Liao, Miao‐Chan Tsai, Bo-Ting Liou, Journal of Applied Physics EngineeringOptoelectronic DevicesQuantum EngineeringSemiconductorsIndium Compositions	2010	78
Effect of N-Type AlGaN Layer on Carrier Transportation and Efficiency Droop of Blue InGaN Light-Emitting Diodes Sheng‐Horng Yen, Miao-Chan Tsai, Meng-Lun Tsai, IEEE Photonics Technology Letters EngineeringN-type Algan LayerElectron LeakageNanoelectronicsLight-emitting Diodes	2009	72
Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer Yen‐Kuang Kuo, Miao‐Chan Tsai, Sheng‐Horng Yen Optics Communications White OledElectrical EngineeringSolid-state LightingEngineeringPhysics	2009	71
Improvement in light-output efficiency of near-ultraviolet InGaN–GaN LEDs fabricated on stripe patterned sapphire substrates Ya‐Ju Lee, T. C. Hsu, Hao‐Chung Kuo, Materials Science and Engineering B Light-output EfficiencyPhotonicsElectrical EngineeringSolid-state LightingEngineering	2005	62
Polarization-dependent optical characteristics of violet InGaN laser diodes Sheng‐Horng Yen, Yen‐Kuang Kuo Journal of Applied Physics Categoryquantum ElectronicsOptical MaterialsEngineeringLaser ApplicationsLaser Material	2008	55
Deep-ultraviolet light-emitting diodes with gradually increased barrier thicknesses from n-layers to p-layers Miao‐Chan Tsai, Sheng‐Horng Yen, Yen‐Kuang Kuo Applied Physics Letters Wide-bandgap SemiconductorEngineeringNanoelectronicsHole CarriersEqual Barrier Thickness	2011	44
First-principles calculation for bowing parameter of wurtzite InxGa1−xN Bo-Ting Liou, Cheng-Yang Lin, Sheng‐Horng Yen, Optics Communications EngineeringFirst-principles CalculationExperimental AnalysisX-ray DiffractionApplied Physics	2005	38

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