KyongTae Kang

Room temperature fabricated ZnO thin film transistor using high-K Bi1.5Zn1.0Nb1.5O7 gate insulator prepared by sputtering

Il‐Doo Kim, Mi-Hwa Lim, KyongTae Kang et al. · Applied Physics Letters · 2006 · 67 citations

Materials Science, Semiconductors, Electrical Engineering +14

Mn-doped Ba0.6Sr0.4TiO3 high-K gate dielectrics for low voltage organic transistor on polymer substrate

KyongTae Kang, Mi-Hwa Lim, Ho‐Gi Kim et al. · Applied Physics Letters · 2005 · 49 citations

Materials Science, Semiconductors, Electrical Engineering +15

High field-effect mobility ZnO thin-film transistors with Mg-doped Ba0.6Sr0.4TiO3 gate insulator on plastic substrates

KyongTae Kang, Mi-Hwa Lim, Ho‐Gi Kim et al. · Applied Physics Letters · 2007 · 33 citations

Materials Science, Room Temperature, Electrical Engineering +13

Low leakage current—stacked MgO∕Bi1.5Zn1.0Nb1.5O7 gate insulator— for low voltage ZnO thin film transistors

Mi-Hwa Lim, KyongTae Kang, Ho‐Gi Kim et al. · Applied Physics Letters · 2006 · 27 citations

Materials Science, Semiconductor Technology, Electrical Engineering +14

Annealing effect on dielectric and leakage current characteristics of Mn-doped Ba0.6Sr0.4TiO3 thin films as gate insulators for low voltage ZnO thin film transistor

KyongTae Kang, Il‐Doo Kim, Mi-Hwa Lim et al. · Thin Solid Films · 2007 · 20 citations

Materials Science, Materials Engineering, Electrical Engineering +9