D.I. Kim

The breakthrough in data retention time of DRAM using Recess-Channel-Array Transistor(RCAT) for 88 nm feature size and beyond

J.Y. Kim, Chang‐Seok Lee, S.E. Kim et al. · 2003 · 81 citations

Engineering, Electrical Engineering, Electronic Materials +16

S-RCAT (sphere-shaped-recess-channel-array transistor) technology for 70nm DRAM feature size and beyond

Young‐Wook Kim, H.J. Oh, D. S. Woo et al. · 2005 · 38 citations

Engineering, Computer Engineering, Electrical Engineering +17

A mechanically enhanced storage node for virtually unlimited height (MESH) capacitor aiming at sub 70nm DRAMs

D.H. Kim, J.Y. Kim, M. Huh et al. · 2004 · 20 citations

Engineering, Electrical Engineering, Materials Science +9

An outstanding and highly manufacturable 80nm DRAM technology

H.S. Kim, D.H. Kim, J.M. Park et al. · 2004 · 13 citations

Engineering, Electrical Engineering, Microelectronics +8