Zhifei Zhao

Design and fabrication of a 3.3 kV 4H-SiC MOSFET

Runhua Huang, Yonghong Tao, Song Bai et al. · Journal of Semiconductors · 2015 · 30 citations

Semiconductor Technology, Dmosfet Cell Structure, Electrical Engineering +14

Reduction of morphological defects in 4H-SiC epitaxial layers

Yun Li, Zhifei Zhao, Le Yu et al. · Journal of Crystal Growth · 2018 · 20 citations

Materials Engineering, Engineering, Morphological Defects +4

Growth of high-quality 4H-SiC epitaxial layers on 4° off-axis C-face 4H-SiC substrates

Zhifei Zhao, Yun Li, Xianjun Xia et al. · Journal of Crystal Growth · 2019 · 16 citations

Materials Science, Off-axis C-face 4H-sic, Materials Engineering +6

Development of 10 kV 4H-SiC JBS diode with FGR termination

Runhua Huang, Yonghong Tao, Pengfei Cao et al. · Journal of Semiconductors · 2014 · 11 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +13

Growth of 3C-SiC on Si(100) by LPCVD using a modified process after the clean step

Zhifei Zhao, Yun Li, Zhijun Yin et al. · Journal of Materials Science Materials in Electronics · 2016 · 10 citations