Changjae Yang

The effects of low temperature buffer layer on the growth of pure Ge on Si(001)

Keun Wook Shin, Hyunwoo Kim, Jungsub Kim et al. · Thin Solid Films · 2010 · 26 citations

Materials Science, Materials Engineering, Electrical Engineering +8

Complete suppression of large InAs island formation on GaAs by metal organic chemical vapor deposition with periodic AsH3 interruption

Youngsoo Lee, Eungjin Ahn, Jungsub Kim et al. · Applied Physics Letters · 2007 · 19 citations

Periodic Ash3 Interruption, Engineering, Chemistry +16

Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics

Changjae Yang, Sang‐Soo Lee, Keun Wook Shin et al. · Applied Physics Letters · 2011 · 13 citations

Ge-on-si Substrates, Optical Materials, Engineering +19

Room-temperature electroluminescence from germanium in an Al_03Ga_07As/Ge heterojunction light-emitting diode by Γ-valley transport

Seongjae Cho, Byung‐Gook Park, Changjae Yang et al. · Optics Express · 2012 · 13 citations · Full text

Optical Materials, Engineering, Optoelectronic Devices +18