Uniaxial strain in graphene by Raman spectroscopy:<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>G</mml:mi></mml:math>peak splitting, Grüneisen parameters, and sample orientation

Tariq Mohiuddin, Antonio Lombardo, Rahul R. Nair, +10

Physical Review B

Optical MaterialsEngineeringUniaxial StrainGraphene-based Nano-antennasOptical Properties +17

First-Principles Prediction of Doped Graphane as a High-Temperature Electron-Phonon Superconductor

G. Savini, Andrea C. Ferrari, Feliciano Giustino

Physical Review Letters

Bending modes, elastic constants and mechanical stability of graphitic systems

G. Savini, Yannick J. Dappe, Sven Öberg, +3

Carbon

Materials ScienceBending ModesNonlinear ElasticityEngineeringMultiscale Mechanics +9

Density functional calculations on the intricacies of Moiré patterns on graphite

Josep M. Campanera, G. Savini, Irene Suarez‐Martinez, +1

Physical Review B

Graphite SubstrateEngineeringElectronic StructureGraphene NanomeshesTunneling Microscopy +16

Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation

Antonio Lombardo, A. Bonetti, G. Savini, +6

Research Explorer (The University of Manchester)

Dislocations of Burgers vector <i>c</i> /2 in graphite

Irene Suarez‐Martinez, G. Savini, G. Haffenden, +2

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

Materials SciencePrismatic DislocationsEngineeringDislocation InteractionMechanics +10

Experimental/Modelling Study of Residual Stress in Al/SiC&lt;sub&gt;p&lt;/sub&gt; Bent Bars by Synchrotron XRD and Slitting Eigenstrain Methods

Xu Song, Solène Chardonnet, G. Savini, +3

Materials science forum

Structure and energy of partial dislocations in wurtzite‐GaN

G. Savini, A. T. Blumenau, M. I. Heggie, +1

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

Materials EngineeringSemiconductorsMaterials SciencePartial DislocationsAsymmetric Reconstructions +13

Electrical activity and migration of 90° partial dislocations in SiC

G. Savini, M. I. Heggie, Sven Öberg, +1

New Journal of Physics

Scanning electron microscopy of dopant distribution in semiconductors

P. G. Merli, Vittorio Morandi, G. Savini, +2

Applied Physics Letters

SemiconductorsSemiconductor TechnologyEngineeringElectron MicroscopyPhysics +11