Concepedia

Jang-Eun Heo

JH

2

Publications

27

Citations

2

H-Index

2002

Active since

Affiliations

Samsung (South Korea)(Current)

Jang-Eun Heo is an author at Samsung (South Korea) specializing in electrical engineering, thin films, and ferroelectric random-access memory.

Top concepts

Thin FilmsEngineeringApplied PhysicsMaterial ScienceElectrical EngineeringFerroelectric Random-access MemoryMemory DevicesMicroelectronicsComputer EngineeringElectronic Materials

Publications per year

2002–2006

2

Publications

2

Integration of Ferroelectric Random Access Memory Devices with Ir/IrO<sub>2</sub>/Pb(Zr<sub><i>x</i></sub>Ti<sub>1-<i>x</i></sub>)\barO<sub>3</sub>/Ir Capacitors Formed by Metalorganic Chemical Vapor Deposition-Grown Pb(Zr<sub><i>x</i></sub>Ti<sub>1-<i>x</i></sub>)O<sub>3</sub>

Moon-Sook Lee, Kun-Sang Park, Sang-Don Nam et al. · Japanese Journal of Applied Physics · 2002 · 14 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Highly Reliable 0.15 µm/14 F<sup>2</sup> Cell Ferroelectric Random Access Memory Capacitor Using SrRuO<sub>3</sub> Buffer Layer

Jang-Eun Heo, Byoung-Jae Bae, Dong-Chul Yoo et al. · Japanese Journal of Applied Physics · 2006 · 13 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17

Rows per page

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