L. W. Doremus - Concepedia

Author

L. W. Doremus

Institut Pprime ORCID

Also Known As

L. Doremus, L. W. Doremus, L. William Doremus, L.W. Doremus, L.William Doremus, Léa Dorémus

Publications

279

Citations

H-Index

Concepts

All Affiliations

Institut Pprime Université de Poitiers École Nationale Supérieure de Mécanique et d'Aérotechnique Centre National de la Recherche Scientifique Fairleigh Dickinson University

About

L. W. Doremus is an author at Institut Pprime specializing in engineering, applied physics, and condensed matter physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	235
2	Applied Physics	5	5	115
3	Materials Science	3	3	99
4	Electrical Engineering	2	2	25
5	Chemistry	1	1	17

L. W. Doremus

Publications

235

Citations

H-Index

Page 1

	Year	Citations
Influence of residual stresses on the fatigue crack growth from surface anomalies in a nickel-based superalloy L. W. Doremus, Jonathan Cormier, Patrick Villechaise, Materials Science and Engineering A Materials ScienceEngineeringSuperalloyMechanical EngineeringResidual Stresses	2015	69
Threshold switching and the on-state in non-crystalline chalcogenide semiconductors G. C. Vezzoli, Peter J. Walsh, L. W. Doremus Journal of Non-Crystalline Solids SemiconductorsEngineeringThreshold SwitchingApplied PhysicsCondensed Matter Physics	1975	52
Calibration of the potential drop method for monitoring small crack growth from surface anomalies – Crack front marking technique and finite element simulations L. W. Doremus, Yves Nadot, Gilbert Hénaff, International Journal of Fatigue Damage MechanismEngineeringStrain LocalizationMechanical EngineeringPotential Drop Method	2014	51
Radiation emission during the on state in a noncrystalline chalcogenide threshold switch G. C. Vezzoli, P. J. Walsh, Paul Kisatsky, Journal of Applied Physics Optical MaterialsEngineeringPeaked EmissionSemiconductorsIi-vi Semiconductor	1974	21
Optical and electrical effects during polymerization and depolymerization in liquid sulfur: indications for the nonuniformity model for covalent liquids G. C. Vezzoli, Paul Kisatsky, L. W. Doremus, Applied Optics Optical MaterialsEngineeringNetwork ModelChemistryPolymers	1976	17
Amorphous semiconductor threshold on−state properties as functions of decay time, ambient temperature, and polarity G. C. Vezzoli, L. W. Doremus, G. G. Tirellis, Applied Physics Letters Decay TimeEngineeringDifferential Conductance G̃tBand GapSemiconductor Device	1975	13
Maintenance of threshold on-state of an amorphous semiconductor by cw bias: Effects of temperature, frequency, and bias interruption G. C. Vezzoli, L. W. Doremus Journal of Applied Physics EngineeringTemperature DependenceOriginal Set PulsePhase Change MemoryCw Bias	1973	12

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