Z. Ya. Zhuchenko - Concepedia

Author

Z. Ya. Zhuchenko

Also Known As

Z Ya Zhuchenko, Z. Y. Zhuchenko, Z. Ya Zhuchenko, Z. Ya. Zhuchenko, Z.Ya Zhuchenko, Z.Ya. Zhuchenko, Zoryana Ya. Zhuchenko, Zoryana Zhuchenko

Publications

490

Citations

H-Index

Concepts

All Affiliations

University of Arkansas at Fayetteville National Academy of Sciences of Ukraine Humboldt-Universität zu Berlin Ferdinand-Braun-Institut Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy

About

Z. Ya. Zhuchenko is an author at University of Arkansas at Fayetteville specializing in physics, applied physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	17	356
2	Applied Physics	12	17	356
3	Electrical Engineering	4	4	51
4	Materials Science	3	3	48
5	Materials Engineering	1	1	15

Z. Ya. Zhuchenko

Publications

414

Citations

H-Index

Page 1

	Year	Citations
Carrier transfer in self-assembled coupled InAs/GaAs quantum dots G. G. Tarasov, Yu. I. Mazur, Z. Ya. Zhuchenko, Journal of Applied Physics Categoryquantum ElectronicsOptical MaterialsEngineeringOptoelectronic DevicesCarrier Transfer	2000	54
Transient luminescence of dense InAs/GaAs quantum dot arrays Jens W. Tomm, Thomas Elsaesser, Yu. I. Mazur, Physical review. B, Condensed matter Categoryquantum ElectronicsQuantum PhotonicsEngineeringLaser ApplicationsOptoelectronic Devices	2003	51
Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures G. G. Tarasov, Z. Ya. Zhuchenko, M. P. Lisitsa, Semiconductors	2006	48
Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots Yu. I. Mazur, Jens W. Tomm, Valentin Petrov, Applied Physics Letters Transient PlEngineeringPhotoluminescencePhysicsQuantum Device	2001	40
Excitonic transfer in coupled InGaAs∕GaAs quantum well to InAs quantum dots Yu. I. Mazur, Baolai Liang, Zh. M. Wang, Applied Physics Letters PhotonicsPhotoluminescenceEngineeringPhysicsQuantum Device	2006	27
Tunneling-barrier controlled excitation transfer in hybrid quantum dot-quantum well nanostructures Yu. I. Mazur, V. G. Dorogan, E. Marega, Journal of Applied Physics PhotonicsPhotoluminescenceEngineeringExcitation TransferPhysics	2010	26
Tailoring of high-temperature photoluminescence in InAs∕GaAs bilayer quantum dot structures Yu. I. Mazur, Zh. M. Wang, G. G. Tarasov, Journal of Applied Physics Categoryquantum ElectronicsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	2005	19
High electric field performance of Al0.3Ga0.7As/GaAs and Al0.3Ga0.7As/GaAs/In0.3Ga0.7As quantum well micro-Hall devices Vasyl P. Kunets, W. Hoerstel, H. Kostial, Sensors and Actuators A Physical Electrical EngineeringEngineeringPhysicsElectronic EngineeringApplied Physics	2002	16
Time-resolved photoluminescence spectroscopy of subwetting layer states in InGaAs∕GaAs quantum dot structures Yu. I. Mazur, Baolai Liang, Zh. M. Wang, Journal of Applied Physics PhotonicsTime-resolved Photoluminescence SpectroscopyPhotoluminescenceEngineeringPhysics	2006	15
Redistribution of Tb and Eu ions in ZnO films grown on different substrates under thermal annealing and its impact on Tb-Eu energy transfer N. Korsunska, L. Borkovska, L. Khomenkova, Applied Surface Science Materials EngineeringMaterials ScienceMaterial AnalysisEngineeringTb-eu Energy Transfer	2020	15

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