Effects of thermal annealing of ZnO layers grown by MBE

K. Ogata, K. Sakurai, Sz. Fujita, +2

Journal of Crystal Growth

Materials EngineeringMaterials ScienceIi-vi SemiconductorEngineeringNanoelectronics +5

Self-assembled ZnO quantum dots with tunable optical properties

Jianguo Lü, Z. Z. Ye, Y. Z. Zhang, +3

Applied Physics Letters

Materials ScienceOptical MaterialsEngineeringPhotoluminescenceGraphene Quantum Dot +12

Growth mode control of ZnO toward nanorod structures or high-quality layered structures by metal-organic vapor phase epitaxy

K. Ogata, K. Maejima, Sz. Fujita

Journal of Crystal Growth

Materials ScienceEngineeringNanomaterialsNanotechnologyHigh-quality Layered Structures +7

ZnO quantum dots synthesized by a vapor phase transport process

Jianguo Lü, Zhihong Ye, Jingyun Huang, +4

Applied Physics Letters

Materials ScienceIi-vi SemiconductorChemical EngineeringPhotoluminescenceEngineering +13

ZnO growth using homoepitaxial technique on sapphire and Si substrates by metalorganic vapor phase epitaxy

K. Ogata, Toru Kawanishi, K. Maejima, +3

Journal of Crystal Growth

Materials EngineeringMaterials ScienceZno GrowthEngineeringSi Substrates +7

ZnO growth on Si substrates by metalorganic vapor phase epitaxy

K. Ogata, Sang‐Woo Kim, Sz. Fujita, +1

Journal of Crystal Growth

Materials ScienceMaterials EngineeringZno GrowthEngineeringOxide Electronics +5

Growth of Polycrystalline GaN on Silicon (001) Substrates by RF Plasma Chemical Vapor Deposition with ZnO Buffer Layer

D. C. Park, Sz. Fujita, Sg. Fujita

physica status solidi (a)

Materials EngineeringMaterials ScienceElectrical EngineeringSemiconductorsEngineering +11

ZnO growth toward optical devices by MOVPE using N2O

K. Ogata, K. Maejima, Sz. Fujita, +1

Journal of Electronic Materials

Materials ScienceIi-vi SemiconductorOptical MaterialsZno GrowthEngineering +4

Homoepitaxial Growth of ZnO by Metalorganic Vapor Phase Epitaxy

K. Ogata, Toru Kawanishi, K. Sakurai, +4

physica status solidi (b)

Materials ScienceMaterials EngineeringBulk Zno SubstrateIi-vi SemiconductorEngineering +10

<i>p</i>-type ZnSe grown by molecular beam epitaxy with remote microwave plasma of N2

Yoichi Kawakami, T. Ohnakado, M. Tsuka, +4

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Materials ScienceSemiconductorsIi-vi SemiconductorPlasma ElectronicsEngineering +10