T. Kunii

Effect of Bias Condition and Input Harmonic Termination on High Efficiency Inverse Class-F Amplifiers

Seiki Goto, T. Kunii, Akira Ohta et al. · 2001 · 36 citations

Harmonic Termination, Nonlinear Circuit, Input Harmonic Termination +3

Efficiency enhancement of doherty amplifier with combination of class-F and inverse class-F schemes for S-band base station application

Seiki Goto, T. Kunii, A. Inoue et al. · 2004 · 33 citations

Electrical Engineering, Engineering, Radio Frequency +10

S and C band Over 100W GaN HEMT 1-chip high power amplifiers with cell division configuration

K. Yamanaka, Kazuhiro Iyomasa, Hiroshi Ohtsuka et al. · AMS Acta (University of Bologna) · 2005 · 27 citations · Full text

A C-Band AlGaN/GaN HEMT with Cat-CVD SiN Passivation Developed for an Over 100 W Operation

Y. Kamo, T. Kunii, Hideo Takeuchi et al. · IEEE MTT-S International Microwave Symposium Digest, 2005. · 2005 · 26 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

A high power density TaN/Au T-gate pHEMT with high humidity resistance for Ka-Band applications

Hirotaka Amasuga, Seiki Goto, T. Shiga et al. · IEEE MTT-S International Microwave Symposium Digest, 2005. · 2005 · 10 citations