Ishwara Bhat - Concepedia

Author

Ishwara Bhat

Rensselaer Polytechnic Institute

Also Known As

I. H. Bhat, Ishwara Bhat

Publications

659

Citations

H-Index

Concepts

All Affiliations

Rensselaer Polytechnic Institute

About

Ishwara Bhat is an author at Rensselaer Polytechnic Institute specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	17	460
2	Applied Physics	12	16	445
3	Business	1	1	31
4	Management	1	1	31
5	Natural Sciences	1	1	19

Ishwara Bhat

Publications

491

Citations

H-Index

Page 1

	Year	Citations
Electrical characterization of Mg-doped GaN grown by metalorganic vapor phase epitaxy James Huang, T. F. Kuech, Hongqiang Lu, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	1996	90
Photoassisted Anodic Etching of Gallium Nitride Hongqiang Lu, Ziming Wu, Ishwara Bhat Journal of The Electrochemical Society Materials ScienceRoom TemperatureChemical EngineeringEthylene GlycolEngineering	1997	64
High quality Hg1−<i>x</i>Cd<i>x</i>Te epitaxial layers by the organometallic process S. K. Ghandhi, Ishwara Bhat Applied Physics Letters Materials ScienceSemiconductorsIi-vi SemiconductorEpitaxial GrowthEngineering	1984	44
Growth of (100) oriented CdTe on Si using Ge as a buffer layer Ishwara Bhat, Wensheng Wang Applied Physics Letters EngineeringBuffer LayerGe BufferSilicon On InsulatorSemiconductors	1994	34
Marketing of Library and Information Services: A Strategic Perspective Antony Jose, Ishwara Bhat Vision The Journal of Business Perspective Customer SatisfactionLis MarketingInformation ServiceExtended Marketing MixManagement	2007	31
Epitaxial CdTe Thin Films on Mica by Vapor Transport Deposition for Flexible Solar Cells Xixing Wen, Zonghuan Lu, Xin Sun, ACS Applied Energy Materials Optical MaterialsEngineeringChemistryEpitaxial Cdte FilmPhotovoltaics	2020	31
Improved CdTe layers on GaAs and Si using atomic layer epitaxy Wensheng Wang, H. Ehsani, Ishwara Bhat Journal of Electronic Materials Ii-vi SemiconductorElectrical EngineeringEngineeringAtomic Layer EpitaxyApplied Physics	1993	29
Analysis of leakage currents in MOCVD grown GaInAsSb based photodetectors operating at 2 µm Vinay Bhagwat, Yegao Xiao, Ishwara Bhat, Journal of Electronic Materials Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringApplied Physics	2006	21
Growth of high quality CdTe and ZnTe on Si substrates using organometallic vapor phase epitaxy Wensheng Wang, Ishwara Bhat Journal of Electronic Materials Materials EngineeringMaterials ScienceIi-vi SemiconductorEngineeringHigh Quality Cdte	1995	20
In-situ monitoring of the growth of Bi2 Te2 and Sb2 Te3 films and Bi2 Te3-Sb2 Te3 superlattice using spectroscopic ellipsometry Hao Cui, Ishwara Bhat, Brooks O’Quinn, Journal of Electronic Materials Materials ScienceTransition Metal ChalcogenidesMaterial AnalysisEngineeringCrystal Growth Technology	2001	20

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