Yoshihisa Abe

Tensile Behavior of Ti,Mo-added Low Carbon Steels with Interphase Precipitation

Naoya Kamikawa, Yoshihisa Abe, Gorō Miyamoto et al. · ISIJ International · 2014 · 161 citations · Full text

Engineering, Mechanical Engineering, Tensile Behavior +16

Suppression of crack generation in GaN epitaxy on Si using cubic SiC as intermediate layers

Jun Komiyama, Yoshihisa Abe, Shunichi Suzuki et al. · Applied Physics Letters · 2006 · 61 citations

Materials Science, Semiconductor Technology, Electrical Engineering +8

Stress reduction in epitaxial GaN films on Si using cubic SiC as intermediate layers

Jun Komiyama, Yoshihisa Abe, Shunichi Suzuki et al. · Journal of Applied Physics · 2006 · 45 citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +11

Polarities of AlN films and underlying 3C-SiC intermediate layers grown on (111) Si substrates

Jun Komiyama, Ken-ichi Eriguchi, Yoshihisa Abe et al. · Journal of Crystal Growth · 2007 · 23 citations

Materials Engineering, Materials Science, Aluminium Nitride +10

Polarities of GaN films and 3C-SiC intermediate layers grown on (111) Si substrates by MOVPE

Jun Komiyama, Yoshihisa Abe, Shunichi Suzuki et al. · Journal of Crystal Growth · 2006 · 16 citations

Materials Engineering, Materials Science, Electrical Engineering +9