M. L. Timmons

18.2% (AM1.5) efficient GaAs solar cell on optical-grade polycrystalline Ge substrate

R. Venkatasubramanian, Brooks O’Quinn, J.S. Hills et al. · 1996 · 65 citations

Engineering, Electrical Engineering, Materials Science +17

Moss–Burstein and plasma reflection characteristics of heavily doped <i>n</i>-type InxGa1−xAs and InPyAs1−y

G.W. Charache, D. M. DePoy, J. E. Raynolds et al. · Journal of Applied Physics · 1999 · 43 citations

Natural Sciences, Materials Engineering, Materials Science +17

An alternative Mg precursor for p-type doping of OMVPE grown material

M. L. Timmons, P.K. Chiang, S. V. Hattangady · Journal of Crystal Growth · 1986 · 43 citations

Engineering, Materials Engineering, Materials Science +10

Radiation response and injection annealing of p+n InGaP solar cells

R. J. Walters, M. A. Xapsos, H.L. Cotal et al. · Solid-State Electronics · 1998 · 33 citations

Engineering, Electrical Engineering, Materials Science +16

Organometallic vapor-phase-epitaxial growth and characterization of ZnGeAs2 on GaAs

Glenn S. Solomon, M. L. Timmons, J. B. Posthill · Journal of Applied Physics · 1989 · 32 citations

Natural Sciences, Materials Science, Physics +17