J.R. Blachère

Epitaxial growth of ZnO films on Si substrates using an epitaxial GaN buffer

Hong Koo Kim, J.R. Blachère · Applied Physics Letters · 2001 · 144 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +15

Pedogenic origin of dolomite in a basaltic weathering profile, Kohala peninsula, Hawaii

Rosemary C. Capo, Charles E. Whipkey, J.R. Blachère et al. · Geology · 2000 · 76 citations

Volcanology, Engineering, Earth Science +16

Growth of highly oriented Pb(Zr, Ti)O3 films on MgO-buffered oxidized Si substrates and its application to ferroelectric nonvolatile memory field-effect transistors

Nasir Basit, Hong Koo Kim, J.R. Blachère · Applied Physics Letters · 1998 · 69 citations

Materials Science, Materials Engineering, Non-volatile Memory +12

High-Temperature Stress Measurements During the Oxidation of NiAl

E. Schumann, J.R. Blachère, F. S. Pettit et al. · Oxidation of Metals · 2000 · 64 citations

The Freezing Point of Water in Porous Glass

J.R. Blachère, J. E. Young · Journal of the American Ceramic Society · 1972 · 50 citations

Freezing Point, Freeze-thaw Cycling, Pore Structure +7