21:I[432972,["/_next/static/chunks/bb923814e1f4d2e9.js","/_next/static/chunks/dd3ee9f5b7716ca6.js","/_next/static/chunks/4204a0ae82542ca8.js","/_next/static/chunks/1270dead247da766.js","/_next/static/chunks/6e1aa89a642f40be.js","/_next/static/chunks/2d7aa753e81324a8.js","/_next/static/chunks/8ffd0b71567920d8.js","/_next/static/chunks/67ea6dfd21f16c5f.js","/_next/static/chunks/24eb4379f68013fd.js","/_next/static/chunks/b8cd775ffdf935bd.js","/_next/static/chunks/983103cd9eb7b428.js","/_next/static/chunks/263f2cdcb9aa2341.js","/_next/static/chunks/294b9525248c8e5f.js"],"default"] 22:T50b,The different properties of acceptor-doped (hard) and donor-doped (soft) lead zirconate titanate (PZT) ceramics are often attributed to different amounts of oxygen vacancies introduced by the dopant. Acceptor doping is believed to cause high oxygen vacancy concentrations, while donors are expected to strongly suppress their amount. In this study, La³⁺ donor-doped, Fe³⁺ acceptor-doped and La³⁺/Fe³⁺-co-doped PZT samples were investigated by oxygen tracer exchange and electrochemical impedance spectroscopy in order to analyse the effect of doping on oxygen vacancy concentrations. Relative changes in the tracer diffusion coefficients for different doping and quantitative relations between defect concentrations allowed estimates of oxygen vacancy concentrations. Donor doping does not completely suppress the formation of oxygen vacancies; rather, it concentrates them in the grain boundary region. Acceptor doping enhances the amount of oxygen vacancies but estimates suggest that bulk concentrations are still in the ppm range, even for 1% acceptor doping. Trapped holes might thus considerably contribute to the charge balancing of the acceptor dopants. This could also be of relevance in understanding the properties of hard and soft PZT.23:T516,Abstract The impact of UV irradiation on Fe‐doped SrTiO 3 (Fe:STO) single crystals is investigated at elevated temperatures. Illumination leads to incorporation of oxygen into the single crystals and thus to a decreasing oxygen vacancy concentration and oxidation of Fe 3+ to Fe 4+ . The Fe 4+ ions cause a color change from transparent/brownish to black. This photochromic blackening due to stoichiometry changes at elevated temperatures is irreversible at room temperature, but annealing at high temperatures, for example at 700 °C, can restore the original stoichiometry and color. Absorbance changes due to UV irradiation are monitored by ex situ and in situ UV–vis spectroscopy experiments and changes in electrical properties are measured by van der Pauw measurements and in‐plane electrochemical impedance spectroscopy. After 1140 min of illumination at 440 °C, for example, electrical measurements reveal a conductivity increase by more than a factor of 5 due to the enhanced hole concentration in blackened Fe:STO. In addition, UV illumination increases the oxygen chemical potential up to a calculated p (O 2 ) of more than 10 9 Pa in Fe:STO. Hence, UV light can be used to tune the color, but also electrical properties of Fe:STO by directly impacting the bulk defect concentrations.24:T4c4,A single crystalline SrTiO₃ working electrode in a zirconia-based solid oxide electrochemical cell is illuminated by UV light at temperatures of 360-460 °C. In addition to photovoltaic effects, this leads to the build-up of a battery-type voltage up to more than 300 mV. After switching off UV light, this voltage only slowly decays. It is caused by UV-induced oxygen incorporation into the mixed conducting working electrode and thus by changes of the oxygen stoichiometry δ in SrTiO_3-δ under UV illumination. These changes of the oxygen content could be followed in time-dependent voltage measurements and also manifest themselves in time-dependent resistance changes during and after UV illumination. Discharge currents measured after UV illumination reveal that a large fraction of the existing oxygen vacancies in SrTiO₃ become filled under

#	Concept	H-Index	Publications	Citations
1	Engineering	2	2	77
2	Applied Physics	2	2	77
3	Chemistry	2	2	77
4	Chemical Engineering	1	1	26
5	Materials Engineering	1	1	51

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