Concepedia

Author

Koichi Kato

The University of TokyoORCID

Also Known As

K Kato, K. Kato, Koichi KATO, Koichi Kato

34

Publications

458

Citations

11

H-Index

45

Concepts

All Affiliations

The University of TokyoToshiba (Japan)National Institute for Materials ScienceTokyo University of Science
KK

About

Koichi Kato is an author at The University of Tokyo specializing in applied physics, engineering, and condensed matter physics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

10

10

313

2

Applied Physics

10

10

313

3

Natural Sciences

5

5

240

4

Chemical Engineering

1

1

105

5

Chemistry

1

1

105

Koichi Kato

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12

Publications

411

Citations

11

H-Index

YearCitations

Chemisorption of a single oxygen molecule on the Si(100) surface: Initial oxidation mechanisms

Koichi Kato, Tsuyoshi Uda

Physical review. B, Condensed matter

2000

105

Acceleration of hydrogen absorption by palladium through surface alloying with gold

Kazuhiro Namba, Shohei Ogura, Satoshi Ohno,

Proceedings of the National Academy of Sciences

2018

72

Observation of Ferroelectric Hysteresis Loop of Fe<sub>3</sub>O<sub>4</sub> at 4.2 K

Koichi Kato, Shūichi Iida

Journal of the Physical Society of Japan

1982

63

Observation of Excitonic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>N</mml:mi></mml:math>-Body Bound States: Polyexcitons in Diamond

Junko Omachi, Takeshi Suzuki, Koichi Kato,

Physical Review Letters

2013

31

Magnetoelectric Effects of Fe<sub>3</sub>O<sub>4</sub>at 4.2 K

Koichi Kato, Shūichi Iida

Journal of the Physical Society of Japan

1981

30

Hybrid density functional analysis of distribution of carbon-related defect levels at 4H-SiC(0001)/SiO<sub>2</sub> interface

Tomoaki Kaneko, Nobuo Tajima, Takahiro Yamasaki,

Applied Physics Express

2017

27

Details of the electronic superstructure of Fe3O4

S. Iida, Koichi Mizushima, Moriji Mizoguchi,

Journal of Applied Physics

1982

26

Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface

Y. Higashi, Riichiro Takaishi, Koichi Kato,

Microelectronics Reliability

2017

13

First-principles study on C=C defects near SiC/SiO<sub>2</sub>interface: Defect passivation by double-bond saturation

Nobuo Tajima, Tomoaki Kaneko, Takahiro Yamasaki,

Japanese Journal of Applied Physics

2018

12

Typical spontaneous symmetry breakdown in solid state as revealed by Fe3O4

S. Iida, Moriji Mizoguchi, S. Umemura,

Journal of Applied Physics

1979

11

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