Ho Hyun Kim

A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors

Baek Su Kim, Seung Dam Hyun, Taehwan Moon et al. · Nanoscale Research Letters · 2020 · 63 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Field‐Induced Ferroelectric Hf_1‐<i>_x</i>Zr<i>_x</i>O₂ Thin Films for High‐<i>k</i> Dynamic Random Access Memory

Seung Dam Hyun, Hyeon Woo Park, Min Hyuk Park et al. · Advanced Electronic Materials · 2020 · 40 citations

Natural Sciences, Materials Engineering, Materials Science +17

Study of ferroelectric characteristics of Hf0.5Zr0.5O2 thin films grown on sputtered or atomic-layer-deposited TiN bottom electrodes

Beom Yong Kim, Baek Su Kim, Seung Dam Hyun et al. · Applied Physics Letters · 2020 · 34 citations

Natural Sciences, Materials Engineering, Materials Science +17

Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al₂O₃/SrTiO₃ Interface

Taehwan Moon, Hyun Jae Lee, Seung Dam Hyun et al. · Advanced Electronic Materials · 2020 · 15 citations

Engineering, Materials Engineering, Materials Science +17