Statistics
Publications
2
Citations
54
H-Index
2
Active since
2016
Affiliations
Kyoto University(Current)
Kazuki Oishi is an author at Kyoto University specializing in engineering, electrical engineering, and nanoelectronics.
Publications per year
2016–2018
2
2
A simulation model for SiC power MOSFET based on surface potential
Yohei Nakamura, Michihiro Shintani, Kazuki Oishi et al. · 2016 · 20 citations
Device Modeling, Simulation Model, Electrical Engineering +13
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