Hidetoshi Kanaya

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Publications

Citations

668

H-Index

Active since

2012

Affiliations

Tokyo Institute of Technology(Current)

Hidetoshi Kanaya is an author at Tokyo Institute of Technology specializing in semiconductor devices, high-frequency semiconductor devices, and resonant tunneling devices.

Publications per year

2012–2016

Publications

Oscillation up to 1.92 THz in resonant tunneling diode by reduced conduction loss

Takeru Maekawa, Hidetoshi Kanaya, Safumi Suzuki et al. · Applied Physics Express · 2016 · 316 citations

Engineering, Electrical Engineering, Materials Science +17

Fundamental Oscillation up to 1.31 THz in Resonant Tunneling Diodes with Thin Well and Barriers

Hidetoshi Kanaya, H. Shibayama, Safumi Suzuki et al. · Applied Physics Express · 2012 · 105 citations

Engineering, Electrical Engineering, Materials Science +16

Fundamental Oscillation up to 1.42 THz in Resonant Tunneling Diodes by Optimized Collector Spacer Thickness

Hidetoshi Kanaya, Takeru Maekawa, Safumi Suzuki et al. · Journal of Infrared Millimeter and Terahertz Waves · 2014 · 92 citations

Engineering, Electrical Engineering, Physics +16

Operation of resonant-tunneling diodes with strong back injection from the collector at frequencies up to 1.46 THz

Michael Feiginov, Hidetoshi Kanaya, Safumi Suzuki et al. · Applied Physics Letters · 2014 · 84 citations

Engineering, Electrical Engineering, Physics +17

Structure dependence of oscillation characteristics of resonant-tunneling-diode terahertz oscillators associated with intrinsic and extrinsic delay times

Hidetoshi Kanaya, Takeru Maekawa, Safumi Suzuki et al. · Japanese Journal of Applied Physics · 2015 · 56 citations

Engineering, Electrical Engineering, Physics +17

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