N. E. Metcalfe

Recent results on metalorganic vapor phase epitaxially grown HgCdTe heterostructure devices

C.T. Elliott, Neil T. Gordon, R. S. Hall et al. · Journal of Electronic Materials · 1996 · 54 citations

Materials Science, Electrical Engineering, Epitaxial Growth +6

<title>MOVPE growth of improved nonequilibium MCT device structures for near-ambient-temperature heterodyne detectors</title>

C. D. Maxey, C. L. Jones, N. E. Metcalfe et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1997 · 29 citations

Engineering, Optoelectronic Devices, Chemistry +20

Growth of fully doped Hg1−xCdxTe heterostructures using a novel iodine doping source to achieve improved device performance at elevated temperatures

C. D. Maxey, C. L. Jones, N. E. Metcalfe et al. · Journal of Electronic Materials · 1996 · 25 citations

Materials Science, Ii-vi Semiconductor, Elevated Temperatures +8

Minimally cooled heterojunction laser heterodyne detectors in metalorganic vapor phase epitaxially grown Hg1-xCdxTe

C.T. Elliott, Neil T. Gordon, T. J. Phillips et al. · Journal of Electronic Materials · 1996 · 17 citations

Ii-vi Semiconductor, Photonics, Engineering +6

MCT infrafed detectors with close to radiatively limited performance at 240 K in the 3–5 µm band

Neil T. Gordon, R. S. Hall, C. L. Jones et al. · Journal of Electronic Materials · 2000 · 14 citations

Radiation Detection, Physics, Limited Performance +7