Z. B. Yan

Resistance switching memory in perovskite oxides

Z. B. Yan, Jun‐Ming Liu · Annals of Physics · 2015 · 85 citations

Engineering, Applied Physics, Perovskite Materials +3

Interactions of charged domain walls and oxygen vacancies in BaTiO3: a first-principles study

Ji-Jun Gong, Chengyuan Li, Yang Zhang et al. · Materials Today Physics · 2018 · 24 citations

Oxygen Vacancies, Engineering, Physics +7

The competing spin orders and fractional magnetization plateaus of the classical Heisenberg model on Shastry-Sutherland lattice: Consequence of long-range interactions

L. Huo, Weichuan Huang, Z. B. Yan et al. · Journal of Applied Physics · 2013 · 22 citations · Full text

Low-loss tantalum pentoxide photonics with a CMOS-compatible process

Zhaoting Geng, Weiren Cheng, Z. B. Yan et al. · Optics Express · 2024 · 18 citations · Full text

Reversible resistance switching in La0.225Pr0.4Ca0.375MnO3: The Joule-heat-assisted phase transition

Z. B. Yan, Kefeng Wang, S. Z. Li et al. · Applied Physics Letters · 2009 · 17 citations

Non-volatile Memory, Engineering, Magnetism +16