Liang Wu

400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

Shoou‐Jinn Chang, C. H. Kuo, Y.K. Su et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2002 · 225 citations

Wide-bandgap Semiconductor, Electrical Engineering, Barrier Layers +10

Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

Liang Wu, Shoou‐Jinn Chang, Ten‐Chin Wen et al. · IEEE Journal of Quantum Electronics · 2002 · 157 citations

Wide-bandgap Semiconductor, Electrical Engineering, Solid-state Lighting +13

Band structure for a one-dimensional photonic crystal containing left-handed materials

Liang Wu, Sailing He, Linfang Shen · Physical review. B, Condensed matter · 2003 · 96 citations · Full text

Optical Materials, Engineering, Negative-index Metamaterial +16

Nitride-Based LEDs With 800<tex>$^circhboxC$</tex>Grown p-AlInGaN–GaN Double-Cap Layers

S.J. Chang, Liang Wu, Y.K. Su et al. · IEEE Photonics Technology Letters · 2004 · 95 citations

Materials Science, Electrical Engineering, Solid-state Lighting +13

White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer

Jinn‐Kong Sheu, C. J. Pan, G.C. Chi et al. · IEEE Photonics Technology Letters · 2002 · 84 citations

White Oled, Photonics, Electrical Engineering +14