400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

Shoou‐Jinn Chang, C. H. Kuo, Y.K. Su, +6

IEEE Journal of Selected Topics in Quantum Electronics

Wide-bandgap SemiconductorElectrical EngineeringBarrier LayersLed StructureEngineering +8

Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

Liang Wu, Shoou‐Jinn Chang, Ten‐Chin Wen, +6

IEEE Journal of Quantum Electronics

Wide-bandgap SemiconductorElectrical EngineeringSolid-state LightingEngineeringGan Barrier Layers +11

Band structure for a one-dimensional photonic crystal containing left-handed materials

Liang Wu, Sailing He, Linfang Shen

Physical review. B, Condensed matter

Optical MaterialsEngineeringNegative-index MetamaterialMetamaterialsExplicit Dispersion Equation +14

Nitride-Based LEDs With 800<tex>$^circhboxC$</tex>Grown p-AlInGaN–GaN Double-Cap Layers

S.J. Chang, Liang Wu, Y.K. Su, +5

IEEE Photonics Technology Letters

Materials ScienceElectrical EngineeringSolid-state LightingP-alingan-gan Double-cap LayerEngineering +11

White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer

Jinn‐Kong Sheu, C. J. Pan, G.C. Chi, +5

IEEE Photonics Technology Letters

White OledPhotonicsElectrical EngineeringSolid-state LightingWhite-light Emission +12

InGaN/GaN light emitting diodes activated in O/sub 2/ ambient

C. H. Kuo, Shoou‐Jinn Chang, Y.K. Su, +5

IEEE Electron Device Letters

Materials EngineeringMaterials ScienceElectrical EngineeringO/sub 2/Engineering +12

Growth of nanoscale InGaN self-assembled quantum dots

Liang‐Wen Ji, Yuezeng Su, Shoou‐Jinn Chang, +6

Journal of Crystal Growth

Materials ScienceEngineeringNanomaterialsNanotechnologyApplied Physics +4

Nitride-based near-ultraviolet LEDs with an ITO transparent contact

C. H. Kuo, S.J. Chang, Y.K. Su, +8

Materials Science and Engineering B

Solid-state LightingEngineeringOptical PropertiesNitride-based Near-ultraviolet LedsApplied Physics +2

Low Temperature Activation of Mg-Doped GaN in O2 Ambient

Cheng Huang Kuo, Shoou‐Jinn Chang, Yan Su, +4

Japanese Journal of Applied Physics

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied Physics +7

InGaN/GaN tunnel-injection blue light-emitting diodes

Ten‐Chin Wen, Shoou‐Jinn Chang, Liang Wu, +6

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorWhite OledElectrical EngineeringOutput EfficiencyEngineering +13