Sang Ouk Ryu

Thin films of layered-structure (1−x)SrBi2Ta2O9−xBi3Ti(Ta1−yNby)O9 solid solution for ferroelectric random access memory devices

S. B. Desu, Prakash Chandra Joshi, X. Zhang et al. · Applied Physics Letters · 1997 · 72 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Properties of SrBi2Ta2O9 ferroelectric thin films prepared by a modified metalorganic solution deposition technique

P. C. Joshi, Sang Ouk Ryu, X. Zhang et al. · Applied Physics Letters · 1997 · 68 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Crystallization Behavior and Physical Properties of Sb-Excess Ge[sub 2]Sb[sub 2+x]Te[sub 5] Thin Films for Phase Change Memory (PCM) Devices

Sang Ouk Ryu, Sung‐Min Yoon, Kyu Jeong Choi et al. · Journal of The Electrochemical Society · 2006 · 50 citations

Natural Sciences, Materials Science, Physics +16

Low temperature processed 0.7SrBi2Ta2O9–0.3Bi3TaTiO9 thin films fabricated on multilayer electrode-barrier structure for high-density ferroelectric memories

Sang Ouk Ryu, P. C. Joshi, Seshu B. Desu · Applied Physics Letters · 1999 · 25 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Crystallographic Orientations and Electrical Properties of Bi_3.47La_0.85Ti₃O₁₂Thin Films on Pt/Ti/SiO₂/Si and Pt/SiO₂/Si Substrates

Sang Ouk Ryu, W. J. Lee, N. Y. Lee et al. · Japanese Journal of Applied Physics · 2003 · 23 citations

Natural Sciences, Materials Engineering, Materials Science +15