For the first time, we demonstrated experimentally 4F ² single-gated IGZO-VCT, monolithically stacked on top of core/peripheral transistors without wafer bonding process for sub-10nm DRAM. Sufficiently low leakage current (I OFF ) of <1 fA/cell, subthreshold swing (SS) of 164 mV/dec and V T of -1.73 V at 85°C is obtained with advanced processes. In order to achieve higher on-current (I ON ) and positive V T , the impacts of fabrication processes including thickness, deposition condition and post deposition treatments of IGZO channel, and its top/ bottom interfaces are investigated utilizing top-gated planar devices. By optimizing processes for gate dielectric interface, planar devices of 70 nm gate length show excellent on-off ratio of 13 order-of-magnitude at 85°C with improved N/PBTI lifetime; extremely low I OFF of 2e-18 A/um, I ON of 25 uA/um at V GS -V T = 1.0 V, and SS of 90 mV/dec with positive V T of 0.19 V. This result implies that 4F ² single-gated IGZO-channel VCT can be an excellent candidate to scale down a unit cell volume for high DRAM capacity, high bandwidth and low power consumption.

	Year	Citations

About