Ganesh Hegde

Efficient and realistic device modeling from atomic detail to the nanoscale

James Fonseca, Tillmann Kubis, Michael Povolotskyi et al. · Journal of Computational Electronics · 2013 · 96 citations · Full text

Engineering, Materials Science, Physics +14

III–V FET channel designs for high current densities and thin inversion layers

M.J.W. Rodwell, William R. Frensley, Sebastian Steiger et al. · 2010 · 34 citations

Engineering, Electrical Engineering, Materials Science +12

Effect of realistic metal electronic structure on the lower limit of contact resistivity of epitaxial metal-semiconductor contacts

Ganesh Hegde, R. Chris Bowen · Applied Physics Letters · 2014 · 18 citations · Full text

Natural Sciences, Materials Science, Physics +17

Structural and optical characterization of novel nitro substituted D-π-A-π-A type chalcone single crystal showing second-order and third-order nonlinear optical properties

Vinay Parol, V. Upadhyaya, Ganesh Hegde et al. · Physica B Condensed Matter · 2019 · 18 citations

Natural Sciences, Chemistry, Physics +17

III-V MOSFETs: Scaling laws, scaling limits, fabrication processes

M.J.W. Rodwell, B. Shin, Yongju Lee et al. · 2010 · 10 citations

Engineering, Electrical Engineering, Microelectronics +16